CSD17556Q5B Todos los transistores

 

CSD17556Q5B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD17556Q5B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.65 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 1770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
   Paquete / Cubierta: SON5X6

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CSD17556Q5B Datasheet (PDF)

 ..1. Size:1379K  texas
csd17556q5b.pdf

CSD17556Q5B
CSD17556Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17556Q5BSLPS392B MARCH 2013REVISED OCTOBER 2014CSD17556Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge

 7.1. Size:1256K  texas
csd17551q5a.pdf

CSD17556Q5B
CSD17556Q5B

CSD17551Q5Awww.ti.com SLPS375 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17551Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.4 nCVGS = 4.5V 9 m Pb Free Terminal PlatingRDS(on) Drain to S

 7.2. Size:1257K  texas
csd17555q5a.pdf

CSD17556Q5B
CSD17556Q5B

CSD17555Q5Awww.ti.com SLPS353 JUNE 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17555Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC Avalanche RatedQgd Gate Charge Gate to Drain 5 nC Pb Free T

 7.3. Size:1261K  texas
csd17553q5a.pdf

CSD17556Q5B
CSD17556Q5B

CSD17553Q5Awww.ti.com SLPS373 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17553Q5A1FEATURESPRODUCT SUMMARY Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 17.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 4.7 nCVGS = 4.5V 3.5 m Pb Free Terminal PlatingRDS(on) Drain to

 7.4. Size:739K  texas
csd17552q5a.pdf

CSD17556Q5B
CSD17556Q5B

CSD17552Q5Awww.ti.com SLPS428 NOVEMBER 201230-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17552Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 9.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 2.0 nCVGS = 4.5V 6.1 m Pb Free Terminal PlatingRDS(on) Dr

 7.5. Size:824K  texas
csd17559q5.pdf

CSD17556Q5B
CSD17556Q5B

CSD17559Q5www.ti.com SLPS374 NOVEMBER 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17559Q5PRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Extremely Low ResistanceVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 39 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 9.3 nC

 7.6. Size:1278K  texas
csd17552q3a.pdf

CSD17556Q5B
CSD17556Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17552Q3ASLPS387A SEPTEMBER 2012 REVISED JUNE 2014CSD17552Q3A 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total

 7.7. Size:1278K  texas
csd17551q3a.pdf

CSD17556Q5B
CSD17556Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17551Q3ASLPS386A SEPTEMBER 2012 REVISED JUNE 2014CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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