CSD17556Q5B
MOSFET. Datasheet pdf. Equivalent
Type Designator: CSD17556Q5B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.65
V
|Id|ⓘ - Maximum Drain Current: 34
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 1770
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014
Ohm
Package:
SON5X6
CSD17556Q5B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CSD17556Q5B
Datasheet (PDF)
..1. Size:1379K texas
csd17556q5b.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17556Q5BSLPS392B MARCH 2013REVISED OCTOBER 2014CSD17556Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Extremely Low ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge
7.1. Size:1256K texas
csd17551q5a.pdf
CSD17551Q5Awww.ti.com SLPS375 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17551Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.4 nCVGS = 4.5V 9 m Pb Free Terminal PlatingRDS(on) Drain to S
7.2. Size:1257K texas
csd17555q5a.pdf
CSD17555Q5Awww.ti.com SLPS353 JUNE 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17555Q5APRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC Avalanche RatedQgd Gate Charge Gate to Drain 5 nC Pb Free T
7.3. Size:1261K texas
csd17553q5a.pdf
CSD17553Q5Awww.ti.com SLPS373 MAY 201230V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17553Q5A1FEATURESPRODUCT SUMMARY Ultralow Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 17.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 4.7 nCVGS = 4.5V 3.5 m Pb Free Terminal PlatingRDS(on) Drain to
7.4. Size:739K texas
csd17552q5a.pdf
CSD17552Q5Awww.ti.com SLPS428 NOVEMBER 201230-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17552Q5A1FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 9.0 nC Avalanche RatedQgd Gate Charge Gate to Drain 2.0 nCVGS = 4.5V 6.1 m Pb Free Terminal PlatingRDS(on) Dr
7.5. Size:824K texas
csd17559q5.pdf
CSD17559Q5www.ti.com SLPS374 NOVEMBER 201230V N-Channel NexFET Power MOSFETsCheck for Samples: CSD17559Q5PRODUCT SUMMARY1FEATURESTA = 25C unless otherwise stated TYPICAL VALUE UNIT2 Extremely Low ResistanceVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 39 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 9.3 nC
7.6. Size:1278K texas
csd17552q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17552Q3ASLPS387A SEPTEMBER 2012 REVISED JUNE 2014CSD17552Q3A 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total
7.7. Size:1278K texas
csd17551q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17551Q3ASLPS386A SEPTEMBER 2012 REVISED JUNE 2014CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total
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