CSD17579Q3A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17579Q3A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.9 VQgⓘ - Carga de la puerta: 5.3 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 93 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0102 Ohm
Paquete / Cubierta: SON3.3X3.3
Búsqueda de reemplazo de MOSFET CSD17579Q3A
CSD17579Q3A Datasheet (PDF)
csd17579q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q3ASLPS527 SEPTEMBER 2014CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat
csd17579q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q5ASLPS524 MARCH 2015CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.4 nC Avalanche Rated
csd17573q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17573Q5BSLPS492A JUNE 2014 REVISED FEBRUARY 2015CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V
csd17575q3.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17575Q3SLPS489A JUNE 2014 REVISED AUGUST 2014CSD17575Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC
csd17571q2.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17571Q2SLPS393A OCTOBER 2013 REVISED JANUARY 2015CSD17571Q2 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V)
csd17570q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17570Q5BSLPS471C FEBRUARY 2014 REVISED FEBRUARY 2015CSD17570Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Tot
csd17577q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q5ASLPS516 AUGUST 2014CSD17577Q5A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 13 nC Pb Free Termi
csd17577q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q3ASLPS515 AUGUST 2014CSD17577Q3A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 12 nC Pb Free Qgd G
csd17578q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q5ASLPS526 MARCH 2015CSD17578Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rated
csd17576q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17576Q5BSLPS497 JUNE 2014CSD17576Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain -to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 25 nC Avalanche Rated Qgd
csd17578q3a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q3ASLPS525 SEPTEMBER 2014CSD17578Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rat
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918