CSD17579Q3A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17579Q3A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.9 VQgⓘ - Carga de la puerta: 5.3 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 93 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0102 Ohm
Paquete / Cubierta: SON3.3X3.3
Búsqueda de reemplazo de CSD17579Q3A MOSFET
CSD17579Q3A Datasheet (PDF)
csd17579q3a.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q3ASLPS527 SEPTEMBER 2014CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat
csd17579q5a.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q5ASLPS524 MARCH 2015CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.4 nC Avalanche Rated
csd17573q5b.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17573Q5BSLPS492A JUNE 2014 REVISED FEBRUARY 2015CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V
csd17575q3.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17575Q3SLPS489A JUNE 2014 REVISED AUGUST 2014CSD17575Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC
Otros transistores... CSD17571Q2 , CSD17573Q5B , CSD17575Q3 , CSD17576Q5B , CSD17577Q3A , CSD17577Q5A , CSD17578Q3A , CSD17578Q5A , RU6888R , CSD17579Q5A , CSD18501Q5A , CSD18502KCS , CSD18502Q5B , CSD18503KCS , CSD18503Q5A , CSD18504KCS , CSD18504Q5A .
History: DMP210DUFB4
History: DMP210DUFB4



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