NDT014L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDT014L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3.6 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: SOT223

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NDT014L Datasheet (PDF)

..1. Size:229K fairchild semi
ndt014l.pdf

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 Veffect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.16 @ VGS = 10 V. high cell density, DMOS technology.This very high density process is espe

..2. Size:352K onsemi
ndt014l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:81K fairchild semi
ndt014.pdf

September 1996 NDT014N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features Power SOT N-Channel enhancement mode power field effect2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process isHigh pow

8.2. Size:256K onsemi
ndt014.pdf

9.1. Size:125K onsemi
ndd01n60 ndt01n60.pdf

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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