NDT014L Datasheet: MOSFET, N-Ch, 60V, 2.8A. Full specification with pinout and replacement list

NDT014L Datasheet. Specs and Replacement

Type Designator: NDT014L 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT223

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NDT014L datasheet

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August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS = 10 V. high cell density, DMOS technology.This very high density process is espe... See More ⇒

..2. Size:352K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

8.1. Size:81K fairchild semi
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September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is High pow... See More ⇒

8.2. Size:256K onsemi
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