NDT2955 Datasheet. Equivalente

 ..1. Size:127K  fairchild semi
 ndt2955.pdf

April 2002 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features This 60V P-Channel MOSFET is produced using 2.5 A, 60 V. RDS(ON) = 300m @ VGS = 10 V Fairchild Semiconductor s high voltage Trench process. It has been optimized for power management RDS(ON) = 500m @ VGS = 4.5 V plications. High density cell design for

 ..2. Size:283K  onsemi
 ndt2955.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:1537K  kexin
 ndt2955.pdf

SMD Type MOSFET P-Channel MOSFET NDT2955 (KDT2955) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) =-60V ID =-2.5 A (VGS =-10V) RDS(ON) 300m (VGS =-10V) 1 2 3 RDS(ON) 500m (VGS =-4.5V) D 0.250 2.30 (typ) Gauge Plane 1.Gate 2.Drain 0.70 0.1 G D S 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter Sy

 ..4. Size:858K  cn vbsemi
 ndt2955.pdf

NDT2955 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete