NDT2955 Todos los transistores

April 2002 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features This 60V P-Channel MOSFET is produced using 2.5 A, 60 V. RDS(ON) = 300m @ VGS = 10 V Fairchild Semiconductor s high voltage Trench process. It has been optimized for power management RDS(ON) = 500m @ VGS = 4.5 V plications. High density cell design for

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET P-Channel MOSFET NDT2955 (KDT2955) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) =-60V ID =-2.5 A (VGS =-10V) RDS(ON) 300m (VGS =-10V) 1 2 3 RDS(ON) 500m (VGS =-4.5V) D 0.250 2.30 (typ) Gauge Plane 1.Gate 2.Drain 0.70 0.1 G D S 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter Sy

NDT2955 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete