April 2002 NDT2955 P-Channel Enhancement Mode Field Effect TransistorGeneral Description Features This 60V P-Channel MOSFET is produced using 2.5 A, 60 V. RDS(ON) = 300m @ VGS = 10 V Fairchild Semiconductors high voltage Trench process. It has been optimized for power management RDS(ON) = 500m @ VGS = 4.5 V plications. High density cell design for

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETP-Channel MOSFETNDT2955 (KDT2955)Unit:mmSOT-2236.500.23.000.1 Features 4 VDS (V) =-60V ID =-2.5 A (VGS =-10V) RDS(ON) 300m (VGS =-10V)1 2 3 RDS(ON) 500m (VGS =-4.5V)D0.2502.30 (typ)Gauge Plane1.Gate 2.Drain0.700.1G D S3.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter Sy

NDT2955www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete