CSD18532Q5B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD18532Q5B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7.2 nS
Cossⓘ - Capacitancia de salida: 470 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: SON5X6
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CSD18532Q5B datasheet
..1. Size:1414K texas
csd18532q5b.pdf 
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18532Q5B SLPS322B NOVEMBER 2012 REVISED JULY 2014 CSD18532Q5B 60-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (1
6.1. Size:751K texas
csd18532kcs.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18532KCS SLPS361B AUGUST 2012 REVISED JULY 2014 CSD18532KCS 60-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (10
6.2. Size:1333K texas
csd18532nq5b.pdf
CSD18532NQ5B www.ti.com SLPS440 JUNE 2013 60-V, N-Channel NexFET Power MOSFETs Check for Samples CSD18532NQ5B 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain to Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (10V) 49 nC Qgd Gate Charge Gate to Drain 7.9 nC Pb Free Terminal Plating V
7.1. Size:395K texas
csd18537nkcs.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18537NKCS SLPS390A JUNE 2013 REVISED MARCH 2015 CSD18537NKCS 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (1
7.2. Size:358K texas
csd18535kcs.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18535KCS SLPS531 MARCH 2015 CSD18535KCS 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (10 V) 63 nC Pb-Free T
7.3. Size:898K texas
csd18531q5a.pdf
Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD18531Q5A SLPS321E JUNE 2012 REVISED AUGUST 2015 CSD18531Q5A 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-source voltage 60 V Avalanche Rated Qg Gate
7.4. Size:467K texas
csd18533kcs.pdf
Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD18533KCS SLPS362C SEPTEMBER 2012 REVISED JUNE 2015 CSD18533KCS 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-source voltage 60 V Avalanche Rated Qg Ga
7.5. Size:1235K texas
csd18537nq5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18537NQ5A SLPS391B JUNE 2013 REVISED JULY 2014 CSD18537NQ5A 60-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (10
7.6. Size:956K texas
csd18534q5a.pdf
Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD18534Q5A SLPS389D OCTOBER 2012 REVISED JUNE 2015 CSD18534Q5A 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-source voltage 60 V Avalanche Rated Qg Gate
7.7. Size:748K texas
csd18534kcs.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18534KCS SLPS383B SEPTEMBER 2012 REVISED OCTOBER 2014 CSD18534KCS 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Tota
7.8. Size:474K texas
csd18536kcs.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18536KCS SLPS532 MARCH 2015 CSD18536KCS 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Total (10 V) 83 nC Pb-Free T
7.9. Size:1358K texas
csd18533q5a.pdf
Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD18533Q5A SLPS388B SEPTEMBER 2012 REVISED JANUARY 2015 CSD18533Q5A 60 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 60 V Avalanche Rated Qg Gate Charge Tota
7.10. Size:835K cn vbsemi
csd18534kcs.pdf
CSD18534KCS www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit
Otros transistores... CSD18503KCS, CSD18503Q5A, CSD18504KCS, CSD18504Q5A, CSD18509Q5B, CSD18531Q5A, CSD18532KCS, CSD18532NQ5B, EMB04N03H, CSD18533KCS, CSD18533Q5A, CSD18534KCS, CSD18534Q5A, CSD18535KCS, CSD18536KCS, CSD18537NKCS, CSD18537NQ5A
