CSD18532Q5B MOSFET. Datasheet pdf. Equivalent

   Type Designator: CSD18532Q5B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: SON5X6

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CSD18532Q5B Datasheet (PDF)

..1. Size:1414K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532Q5BSLPS322B NOVEMBER 2012 REVISED JULY 2014CSD18532Q5B 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

6.1. Size:751K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10

6.2. Size:1333K texas
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CSD18532NQ5Bwww.ti.com SLPS440 JUNE 201360-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD18532NQ5B1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10V) 49 nCQgd Gate Charge Gate to Drain 7.9 nC Pb Free Terminal PlatingV

7.1. Size:395K texas
csd18537nkcs.pdf pdf_icon

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

7.2. Size:358K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T

7.3. Size:898K texas
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Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18531Q5ASLPS321E JUNE 2012 REVISED AUGUST 2015CSD18531Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate

7.4. Size:467K texas
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Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18533KCSSLPS362C SEPTEMBER 2012 REVISED JUNE 2015CSD18533KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Ga

7.5. Size:1235K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NQ5ASLPS391B JUNE 2013 REVISED JULY 2014CSD18537NQ5A 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10

7.6. Size:956K texas
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Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18534Q5ASLPS389D OCTOBER 2012 REVISED JUNE 2015CSD18534Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate

7.7. Size:748K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18534KCSSLPS383B SEPTEMBER 2012 REVISED OCTOBER 2014CSD18534KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota

7.8. Size:474K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18536KCSSLPS532 MARCH 2015CSD18536KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 83 nC Pb-Free T

7.9. Size:1358K texas
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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18533Q5ASLPS388B SEPTEMBER 2012 REVISED JANUARY 2015CSD18533Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota

7.10. Size:835K cn vbsemi
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CSD18534KCSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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CSD18532Q5B MOSFET. Datasheet pdf. Equivalent

CSD18532Q5B Datasheet (PDF)

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