NDT3055 Todos los transistores

May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V. transistors are produced using Fairchild's proprietary, High density cell design for extremely low RDS(ON). high cell density, DMOS technology. This very high density process is especially t

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDT3055 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless

August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, field effect transistors are produced using Fairchild's RDS(ON) = 0.120 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is

NDT3055L www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless