NDT3055 Datasheet. Specs and Replacement

Type Designator: NDT3055  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT223

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NDT3055 datasheet

 ..1. Size:82K  fairchild semi
ndt3055.pdf pdf_icon

NDT3055

May 1998 NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V. transistors are produced using Fairchild's proprietary, High density cell design for extremely low RDS(ON). high cell density, DMOS technology. This very high density process is especially t... See More ⇒

 ..2. Size:255K  onsemi
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NDT3055

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:923K  cn vbsemi
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NDT3055

NDT3055 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 10 V 4.5 RoHS 10 nC COMPLIANT 60 APPLICATIONS 0.085 at VGS = 4.5 V 3.5 Load Switches for Portable Devices D SOT-223-3 D G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless... See More ⇒

 0.1. Size:84K  fairchild semi
ndt3055l.pdf pdf_icon

NDT3055

August 1998 NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 4 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, field effect transistors are produced using Fairchild's RDS(ON) = 0.120 @ VGS = 4.5 V. proprietary, high cell density, DMOS technology. This very high density process is ... See More ⇒

Detailed specifications: NDS9953A, NDS9955, NDS9956A, NDS9957, NDS9959, NDT014, NDT014L, NDT2955, IRF3205, NDT3055L, NDT410EL, NDT451AN, NDT451N, NDT452AP, NDT452P, NDT453N, NDT454P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.