CSD19536KTT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD19536KTT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 1820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: D2PAK

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CSD19536KTT datasheet

 ..1. Size:876K  texas
 csd19536ktt.pdf pdf_icon

CSD19536KTT

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19536KTT SLPS540A MARCH 2015 REVISED MAY 2015 CSD19536KTT 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-source voltage 100 V Avalanche Rated Qg Gate charge total (10 V

 5.1. Size:404K  texas
 csd19536kcs.pdf pdf_icon

CSD19536KTT

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19536KCS SLPS485B JANUARY 2014 REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Tota

 7.1. Size:1281K  texas
 csd19531q5a.pdf pdf_icon

CSD19536KTT

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19531Q5A SLPS406B SEPTEMBER 2013 REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total

 7.2. Size:504K  texas
 csd19537q3.pdf pdf_icon

CSD19536KTT

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD19537Q3 SLPS549 AUGUST 2015 CSD19537Q3 100 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16 nC Pb-Free

MOSTRAR MÁS

Otros transistores... CSD19532Q5B, CSD19533KCS, CSD19533Q5A, CSD19534KCS, CSD19534Q5A, CSD19535KCS, CSD19535KTT, CSD19536KCS, IRF3710, CSD19537Q3, CSD22202W15, CSD22204W, CSD23201W10, CSD23202W10, CSD23203W, CSD23381F4, CSD23382F4