CSD19536KTT Todos los transistores

 

CSD19536KTT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD19536KTT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.2 V
   Qgⓘ - Carga de la puerta: 118 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: D2PAK

 Búsqueda de reemplazo de MOSFET CSD19536KTT

 

CSD19536KTT Datasheet (PDF)

 ..1. Size:876K  texas
csd19536ktt.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KTTSLPS540A MARCH 2015 REVISED MAY 2015CSD19536KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 100 V Avalanche RatedQg Gate charge total (10 V

 5.1. Size:404K  texas
csd19536kcs.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

 7.1. Size:1281K  texas
csd19531q5a.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.2. Size:504K  texas
csd19537q3.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19537Q3SLPS549 AUGUST 2015CSD19537Q3 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16 nC Pb-Free

 7.3. Size:352K  texas
csd19538q3a.pdf

CSD19536KTT
CSD19536KTT

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD19538Q3ASLPS583A MAY 2016 REVISED MARCH 2017CSD19538Q3A 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 4

 7.4. Size:685K  texas
csd19533kcs.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533KCSSLPS482B DECEMBER 2013 REVISED JANUARY 2015CSD19533KCS, 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tot

 7.5. Size:912K  texas
csd19534q5a.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534Q5ASLPS483 MAY 2014CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 17 nC Pb-Free

 7.6. Size:320K  texas
csd19534kcs.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534KCSSLPS530 JANUARY 2015CSD19534KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16.4 nC Pb-

 7.7. Size:875K  texas
csd19535ktt.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KTTSLPS539A MARCH 2015 REVISED MAY 2015CSD19535KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V

 7.8. Size:1312K  texas
csd19533q5a.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533Q5ASLPS486A DECEMBER 2013 REVISED MAY 2014CSD19533Q5A 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (1

 7.9. Size:1376K  texas
csd19532q5b.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532Q5BSLPS414A DECEMBER 2013 REVISED JUNE 2014CSD19532Q5B 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V)

 7.10. Size:367K  texas
csd19532ktt.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532KTTSLPS553 OCTOBER 2015CSD19532KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 44 nC Pb-Fr

 7.11. Size:398K  texas
csd19531kcs.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531KCSSLPS407B SEPTEMBER 2013 REVISED JULY 2014CSD19531KCS 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.12. Size:736K  texas
csd19535kcs.pdf

CSD19536KTT
CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KCSSLPS484B JANUARY 2014 REVISED OCTOBER 2014CSD19535KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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