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CSD19536KTT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CSD19536KTT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 118 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 1820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для CSD19536KTT

 

 

CSD19536KTT Datasheet (PDF)

 ..1. Size:876K  texas
csd19536ktt.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KTTSLPS540A MARCH 2015 REVISED MAY 2015CSD19536KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 100 V Avalanche RatedQg Gate charge total (10 V

 5.1. Size:404K  texas
csd19536kcs.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

 7.1. Size:1281K  texas
csd19531q5a.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.2. Size:504K  texas
csd19537q3.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19537Q3SLPS549 AUGUST 2015CSD19537Q3 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16 nC Pb-Free

 7.3. Size:352K  texas
csd19538q3a.pdf

CSD19536KTT CSD19536KTT

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD19538Q3ASLPS583A MAY 2016 REVISED MARCH 2017CSD19538Q3A 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 4

 7.4. Size:685K  texas
csd19533kcs.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533KCSSLPS482B DECEMBER 2013 REVISED JANUARY 2015CSD19533KCS, 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tot

 7.5. Size:912K  texas
csd19534q5a.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534Q5ASLPS483 MAY 2014CSD19534Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 17 nC Pb-Free

 7.6. Size:320K  texas
csd19534kcs.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19534KCSSLPS530 JANUARY 2015CSD19534KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16.4 nC Pb-

 7.7. Size:875K  texas
csd19535ktt.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KTTSLPS539A MARCH 2015 REVISED MAY 2015CSD19535KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V

 7.8. Size:1312K  texas
csd19533q5a.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19533Q5ASLPS486A DECEMBER 2013 REVISED MAY 2014CSD19533Q5A 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (1

 7.9. Size:1376K  texas
csd19532q5b.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532Q5BSLPS414A DECEMBER 2013 REVISED JUNE 2014CSD19532Q5B 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V)

 7.10. Size:367K  texas
csd19532ktt.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532KTTSLPS553 OCTOBER 2015CSD19532KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 44 nC Pb-Fr

 7.11. Size:398K  texas
csd19531kcs.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531KCSSLPS407B SEPTEMBER 2013 REVISED JULY 2014CSD19531KCS 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.12. Size:736K  texas
csd19535kcs.pdf

CSD19536KTT CSD19536KTT

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19535KCSSLPS484B JANUARY 2014 REVISED OCTOBER 2014CSD19535KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

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