CSD19537Q3 Todos los transistores

 

CSD19537Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD19537Q3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 251 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
   Paquete / Cubierta: SON3.3X3.3
 

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CSD19537Q3 Datasheet (PDF)

 ..1. Size:504K  texas
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CSD19537Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19537Q3SLPS549 AUGUST 2015CSD19537Q3 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 16 nC Pb-Free

 7.1. Size:404K  texas
csd19536kcs.pdf pdf_icon

CSD19537Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

 7.2. Size:1281K  texas
csd19531q5a.pdf pdf_icon

CSD19537Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

 7.3. Size:352K  texas
csd19538q3a.pdf pdf_icon

CSD19537Q3

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD19538Q3ASLPS583A MAY 2016 REVISED MARCH 2017CSD19538Q3A 100-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low-Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 4

Otros transistores... CSD19533KCS , CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS , CSD19535KTT , CSD19536KCS , CSD19536KTT , IRFB4110 , CSD22202W15 , CSD22204W , CSD23201W10 , CSD23202W10 , CSD23203W , CSD23381F4 , CSD23382F4 , CSD25201W15 .

History: KI2304DS | HSU80N03

 

 
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