CSD23381F4 Todos los transistores

 

CSD23381F4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD23381F4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 98 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: PICOSTAR
 

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CSD23381F4 Datasheet (PDF)

 ..1. Size:1337K  texas
csd23381f4.pdf pdf_icon

CSD23381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23381F4SLPS450E OCTOBER 2013 REVISED MAY 2015CSD23381F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V High Operating Drain CurrentQg Gate Charg

 7.1. Size:1297K  texas
csd23382f4.pdf pdf_icon

CSD23381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23382F4SLPS453C MAY 2014REVISED OCTOBER 2014CSD23382F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Cha

 9.1. Size:141K  texas
csd23201w10.pdf pdf_icon

CSD23381F4

CSD23201W10www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010P-Channel NexFET Power MOSFETCheck for Samples: CSD23201W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.26 nC Pb FreeVGS = 1.5V 110

 9.2. Size:1051K  texas
csd23202w10.pdf pdf_icon

CSD23381F4

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23202W10SLPS506 AUGUST 2014CSD23202W10 12-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mmVDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Charge Total (4.

Otros transistores... CSD19536KCS , CSD19536KTT , CSD19537Q3 , CSD22202W15 , CSD22204W , CSD23201W10 , CSD23202W10 , CSD23203W , AON7408 , CSD23382F4 , CSD25201W15 , CSD25202W15 , CSD25211W1015 , CSD25213W10 , CSD25301W1015 , CSD25302Q2 , CSD25303W1015 .

History: FDD6N50TF | 2SJ125 | NVMFD5C650NL | IRFU420B | UM6K31N

 

 
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