CSD23382F4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD23382F4

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 118 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm

Encapsulados: PICOSTAR

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CSD23382F4 datasheet

 ..1. Size:1297K  texas
 csd23382f4.pdf pdf_icon

CSD23382F4

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23382F4 SLPS453C MAY 2014 REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET MOSFET 1 Features Product Summary 1 Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size) Qg Gate Cha

 7.1. Size:1337K  texas
 csd23381f4.pdf pdf_icon

CSD23382F4

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23381F4 SLPS450E OCTOBER 2013 REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET MOSFET 1 Features Product Summary 1 Ultra-Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 12 V High Operating Drain Current Qg Gate Charg

 9.1. Size:141K  texas
 csd23201w10.pdf pdf_icon

CSD23382F4

CSD23201W10 www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010 P-Channel NexFET Power MOSFET Check for Samples CSD23201W10 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint 1mm 1mm Qg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm Height Qgd Gate Charge Gate to Drain 0.26 nC Pb Free VGS = 1.5V 110

 9.2. Size:1051K  texas
 csd23202w10.pdf pdf_icon

CSD23382F4

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD23202W10 SLPS506 AUGUST 2014 CSD23202W10 12-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mm VDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm Height Qg Gate Charge Total ( 4.

MOSTRAR MÁS

Otros transistores... CSD19536KTT, CSD19537Q3, CSD22202W15, CSD22204W, CSD23201W10, CSD23202W10, CSD23203W, CSD23381F4, IRF630, CSD25201W15, CSD25202W15, CSD25211W1015, CSD25213W10, CSD25301W1015, CSD25302Q2, CSD25303W1015, CSD25304W1015