CSD23382F4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CSD23382F4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 V
   Qgⓘ - Carga de la puerta: 1.04 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 118 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm
   Paquete / Cubierta: PICOSTAR

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CSD23382F4 Datasheet (PDF)

..1. Size:1297K texas
csd23382f4.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23382F4SLPS453C MAY 2014REVISED OCTOBER 2014CSD23382F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size)Qg Gate Cha

7.1. Size:1337K texas
csd23381f4.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23381F4SLPS450E OCTOBER 2013 REVISED MAY 2015CSD23381F4 12 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 12 V High Operating Drain CurrentQg Gate Charg

9.1. Size:141K texas
csd23201w10.pdf

CSD23201W10www.ti.com SLPS209A AUGUST 2009 REVISED MAY 2010P-Channel NexFET Power MOSFETCheck for Samples: CSD23201W101FEATURESPRODUCT SUMMARY Ultra Low Qg and QgdVDS Drain to Source Voltage 12 V Small Footprint 1mm 1mmQg Gate Charge Total (4.5V) 1.8 nC Low Profile 0.62mm HeightQgd Gate Charge Gate to Drain 0.26 nC Pb FreeVGS = 1.5V 110

9.2. Size:1051K texas
csd23202w10.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23202W10SLPS506 AUGUST 2014CSD23202W10 12-V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Small Footprint 1 mm 1 mmVDS Drain-to-Source Voltage 12 V Low Profile 0.62-mm HeightQg Gate Charge Total (4.

9.3. Size:1364K texas
csd23280f3.pdf

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD23280F3ZHCSEX4A APRIL 2016 REVISED AUGUST 2017CSD23280F3 12V P FemtoFETMOSFET1 1 TA = 25C Qg QgdVDS 12 V Qg

9.4. Size:1038K texas
csd23203w.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD23203WSLPS533 DECEMBER 2014CSD23203W 8 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 8 V Small FootprintQg Gate Charge Total (4.5 V) 4.9 nC Low Profile 0.62

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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