CSD25202W15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD25202W15

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 6 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: WLP1.5X1.5

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CSD25202W15 datasheet

 ..1. Size:985K  texas
 csd25202w15.pdf pdf_icon

CSD25202W15

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD25202W15 SLPS508A JUNE 2014 REVISED JULY 2014 CSD25202W15 20-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Low-Resistance TA = 25 C TYPICAL VALUE UNIT Small Footprint 1.5 mm 1.5 mm VDS Drain-to-Source Voltage 20 V Gate ESD Protection 3 kV Qg Gate C

 7.1. Size:314K  texas
 csd25201w15.pdf pdf_icon

CSD25202W15

CSD25201W15 www.ti.com SLPS269A JUNE 2010 REVISED JULY 2011 P-Channel NexFET Power MOSFET Check for Samples CSD25201W15 PRODUCT SUMMARY 1 FEATURES VDS Drain to Drain Voltage 20 V Low Resistance Qg Gate Charge Total ( 4.5V) 4.3 nC Small Footprint 1.5-mm 1.5-mm Qgd Gate Charge Gate to Drain 0.7 nC Gate ESD Protection 3kV VGS = 1.8V 52 m Pb F

 8.1. Size:742K  texas
 csd25211w1015.pdf pdf_icon

CSD25202W15

CSD25211W1015 www.ti.com SLPS296 FEBRUARY 2012 P-Channel NexFET Power MOSFET Check for Samples CSD25211W1015 1 FEATURES PRODUCT SUMMARY Ultra Low On Resistance TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain to Source Voltage -20 V Small Footprint 1.0mm x 1.5mm Qg Gate Charge Total (-4.5V) 3.4 nC Qgd Gate Charge Gate to Drain

 8.2. Size:1297K  texas
 csd25213w10.pdf pdf_icon

CSD25202W15

CSD25213W10 www.ti.com SLPS443 JUNE 2013 P-Channel NexFET Power MOSFET Check for Samples CSD25213W10 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 20 V Small Footprint 1mm 1mm Qg Gate Charge Total (4.5V) 2.2 nC Low Profile 0.62mm Height Qgd Gate Charge Gate to Drain 0.14 nC VGS = 2.5V 54 m Pb Free RDS(on) Drain to S

MOSTRAR MÁS

Otros transistores... CSD22202W15, CSD22204W, CSD23201W10, CSD23202W10, CSD23203W, CSD23381F4, CSD23382F4, CSD25201W15, AON7408, CSD25211W1015, CSD25213W10, CSD25301W1015, CSD25302Q2, CSD25303W1015, CSD25304W1015, CSD25310Q2, CSD25401Q3