NDT451N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDT451N  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOT223

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NDT451N datasheet

 8.1. Size:276K  fairchild semi
 ndt451an.pdf pdf_icon

NDT451N

February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini

 8.2. Size:456K  onsemi
 ndt451an.pdf pdf_icon

NDT451N

NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V effect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d

 8.3. Size:918K  cn vbsemi
 ndt451an.pdf pdf_icon

NDT451N

NDT451AN www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.019 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.021 ID (A) 7 Configuration Single D SOT-223 G D S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARA

MOSTRAR MÁS

Otros transistores... NDS9959, NDT014, NDT014L, NDT2955, NDT3055, NDT3055L, NDT410EL, NDT451AN, 20N60, NDT452AP, NDT452P, NDT453N, NDT454P, NDT455N, NDT456P, OM11N55SA, OM11N60SA