NDT451N Datasheet and Replacement. Cross Reference Search

NDT451N Datasheet (PDF)

8.1. Size:276K fairchild semi
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February 2009 NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mini

8.2. Size:456K onsemi
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NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d

8.3. Size:918K cn vbsemi
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NDT451ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA

Datasheet: NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 , NDT3055L , NDT410EL , NDT451AN , 20N60 , NDT452AP , NDT452P , NDT453N , NDT454P , NDT455N , NDT456P , OM11N55SA , OM11N60SA .