NDT451N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDT451N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT223
NDT451N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDT451N
Datasheet (PDF)
8.1. Size:276K fairchild semi
ndt451an.pdf 
February 2009 NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V. proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mini
8.2. Size:456K onsemi
ndt451an.pdf
NDT451ANN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesPower SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10Veffect transistors are produced using ON RDS(ON) = 0.05 @ VGS = 4.5V. Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially High density cell d
8.3. Size:918K cn vbsemi
ndt451an.pdf
NDT451ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARA
Datasheet: NDS9959
, NDT014
, NDT014L
, NDT2955
, NDT3055
, NDT3055L
, NDT410EL
, NDT451AN
, IRF840
, NDT452AP
, NDT452P
, NDT453N
, NDT454P
, NDT455N
, NDT456P
, OM11N55SA
, OM11N60SA
.
