CSD86330Q3D Todos los transistores

 

CSD86330Q3D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD86330Q3D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: SON3.3X3.3
 

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CSD86330Q3D Datasheet (PDF)

 ..1. Size:1426K  texas
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CSD86330Q3D

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

 8.1. Size:1169K  texas
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CSD86330Q3D

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

 8.2. Size:1459K  texas
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CSD86330Q3D

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

 8.3. Size:495K  texas
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CSD86330Q3D

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

Otros transistores... CSD75207W15 , CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , CSD85301Q2 , CSD85312Q3E , CSD86311W1723 , IRFP250 , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D , CSD87350Q5D , CSD87351Q5D , CSD87352Q5D .

History: 2SK526 | AOD2904 | SL20N10

 

 
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