CSD86330Q3D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD86330Q3D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm

Encapsulados: SON3.3X3.3

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CSD86330Q3D datasheet

 ..1. Size:1426K  texas
 csd86330q3d.pdf pdf_icon

CSD86330Q3D

CSD86330Q3D www.ti.com SLPS264C OCTOBER 2010 REVISED OCTOBER 2011 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86330Q3D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 90% System Efficiency at 15A offering high current, high efficiency, and high Up To 20A Operation frequency capability

 8.1. Size:1169K  texas
 csd86360q5d.pdf pdf_icon

CSD86330Q3D

CSD86360Q5D www.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86360Q5D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 91% system Efficiency at 25A offering high current, high efficiency, and high Up To 50A Operation frequency capability

 8.2. Size:1459K  texas
 csd86350q5d.pdf pdf_icon

CSD86330Q3D

CSD86350Q5D www.ti.com SLPS223E MAY 2010 REVISED OCTOBER 2011 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86350Q5D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 90% system Efficiency at 25A offering high current, high efficiency, and high Up To 40A Operation frequency capability in a

 8.3. Size:495K  texas
 csd86311w1723.pdf pdf_icon

CSD86330Q3D

CSD86311W1723 www.ti.com SLPS251 MAY 2010 Dual N-Channel NexFET Power MOSFET Check for Samples CSD86311W1723 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 25 V Dual N-Ch MOSFETs Qg Gate Charge Total (4.5V) 3.1 nC Common Source Configuration Qgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mm VGS = 2.5V 37 m Ultra Low Qg and Qgd

MOSTRAR MÁS

Otros transistores... CSD75207W15, CSD75208W1015, CSD75211W1723, CSD75301W1015, CSD83325L, CSD85301Q2, CSD85312Q3E, CSD86311W1723, AON7506, CSD86350Q5D, CSD87312Q3E, CSD87330Q3D, CSD87331Q3D, CSD87334Q3D, CSD87350Q5D, CSD87351Q5D, CSD87352Q5D