Справочник MOSFET. CSD86330Q3D

 

CSD86330Q3D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CSD86330Q3D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.5 ns
   Cossⓘ - Выходная емкость: 350 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm
   Тип корпуса: SON3.3X3.3
 

 Аналог (замена) для CSD86330Q3D

   - подбор ⓘ MOSFET транзистора по параметрам

 

CSD86330Q3D Datasheet (PDF)

 ..1. Size:1426K  texas
csd86330q3d.pdfpdf_icon

CSD86330Q3D

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

 8.1. Size:1169K  texas
csd86360q5d.pdfpdf_icon

CSD86330Q3D

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

 8.2. Size:1459K  texas
csd86350q5d.pdfpdf_icon

CSD86330Q3D

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

 8.3. Size:495K  texas
csd86311w1723.pdfpdf_icon

CSD86330Q3D

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

Другие MOSFET... CSD75207W15 , CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , CSD85301Q2 , CSD85312Q3E , CSD86311W1723 , IRFP250 , CSD86350Q5D , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D , CSD87350Q5D , CSD87351Q5D , CSD87352Q5D .

History: IRF2903ZLPBF | IXFR24N100Q3 | TPCF8004 | TK16V60W5 | 50N06G | HAT2282C | SQS481ENW

 

 
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