CSD86350Q5D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD86350Q5D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 13 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 645 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: SON5X6
Búsqueda de reemplazo de CSD86350Q5D MOSFET
CSD86350Q5D Datasheet (PDF)
csd86350q5d.pdf

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a
csd86360q5d.pdf

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability
csd86330q3d.pdf

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability
csd86311w1723.pdf

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd
Otros transistores... CSD75208W1015 , CSD75211W1723 , CSD75301W1015 , CSD83325L , CSD85301Q2 , CSD85312Q3E , CSD86311W1723 , CSD86330Q3D , 20N50 , CSD87312Q3E , CSD87330Q3D , CSD87331Q3D , CSD87334Q3D , CSD87350Q5D , CSD87351Q5D , CSD87352Q5D , CSD87353Q5D .
History: UTM4052G-S08-R
History: UTM4052G-S08-R



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