CSD88539ND Todos los transistores

 

CSD88539ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD88539ND
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO-8

 Búsqueda de reemplazo de MOSFET CSD88539ND

 

CSD88539ND Datasheet (PDF)

 ..1. Size:1002K  texas
csd88539nd.pdf

CSD88539ND
CSD88539ND

CSD88539NDSLPS456 FEBRUARY 2014CSD88539ND, Dual 60 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Avalanche RatedVDS Drain-to-Source Voltage 60 V Pb FreeQg Gate Charge Total (10 V) 7.2 nC RoHS Compliant Qgd Gate Charge Gate to Drain 1.1 nCVGS = 6 V 27 m Halogen FreeRDS(on) Drain-

 7.1. Size:1176K  texas
csd88537nd.pdf

CSD88539ND
CSD88539ND

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD88537NDZHCSCQ9A JANUARY 2014 REVISED AUGUST 2014CSD88537ND 60V N NexFET (MOSFET)1 1 Qg QgdTA = 25

 9.1. Size:300K  cdil
csd880 gr y.pdf

CSD88539ND
CSD88539ND

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CSD880TO-220Audio Frequency Power Amplifier Applications.Complementary CSB834ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter- Base Voltage VEBO 7.0 VCollector Curr

 9.2. Size:243K  cdil
csd882 p q.pdf

CSD88539ND
CSD88539ND

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD882TO126 Plastic PackageECBComplementary CSB772Audio Frequency Power Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


CSD88539ND
  CSD88539ND
  CSD88539ND
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top