CSD88539ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CSD88539ND Datasheet (PDF)

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CSD88539NDSLPS456 FEBRUARY 2014CSD88539ND, Dual 60 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Avalanche RatedVDS Drain-to-Source Voltage 60 V Pb FreeQg Gate Charge Total (10 V) 7.2 nC RoHS Compliant Qgd Gate Charge Gate to Drain 1.1 nCVGS = 6 V 27 m Halogen FreeRDS(on) Drain-

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Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD88537NDZHCSCQ9A JANUARY 2014 REVISED AUGUST 2014CSD88537ND 60V N NexFET (MOSFET)1 1 Qg QgdTA = 25

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CSD880TO-220Audio Frequency Power Amplifier Applications.Complementary CSB834ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter- Base Voltage VEBO 7.0 VCollector Curr

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORCSD882TO126 Plastic PackageECBComplementary CSB772Audio Frequency Power Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage(open emitter) >40

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