K2611 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: K2611
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 300 W
Tensión drenaje-fuente |Vds|: 900 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 5 V
Carga de compuerta (Qg): 72 nC
Tiempo de elevación (tr): 135 nS
Conductancia de drenaje-sustrato (Cd): 260 pF
Resistencia drenaje-fuente RDS(on): 1.1 Ohm
Empaquetado / Estuche: TO-247
Búsqueda de reemplazo de MOSFET K2611
K2611 Datasheet (PDF)
..1. k2611.pdf 
Size:622K _winsemi
K2611K2611K2611K2611Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 11A,900V, R (Max1.10)@V =10VDS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power fi
0.1. 2sk2611.pdf Size:408K _toshiba
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
0.2. k2611s.pdf Size:571K _winsemi
K2611SK2611SK2611SK2611SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power
0.3. k2611b.pdf Size:999K _winsemi
K2611BK2611BK2611BK2611BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 11A,900V, R (Max1.10)@V =10VDS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode powe
0.4. k2611sb.pdf Size:694K _winsemi
K2611SBK2611SBK2611SBK2611SBSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode p
0.5. 2sk2611.pdf Size:219K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.A
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