K2611 Todos los transistores

 ..1. Size:622K  winsemi
 k2611.pdf

K2611 K2611 K2611 K2611 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 11A,900V, R (Max1.10 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power fi

 0.1. Size:408K  toshiba
 2sk2611.pdf

2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

 0.2. Size:694K  winsemi
 k2611sb.pdf

K2611SB K2611SB K2611SB K2611SB Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode p

 0.3. Size:571K  winsemi
 k2611s.pdf

K2611S K2611S K2611S K2611S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power

 0.4. Size:999K  winsemi
 k2611b.pdf

K2611B K2611B K2611B K2611B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 11A,900V, R (Max1.10 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode powe

 0.5. Size:219K  inchange semiconductor
 2sk2611.pdf

isc N-Channel MOSFET Transistor 2SK2611 DESCRIPTION Drain Current I =9A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on resistance. High speed switching. No secondary breakdown. Suitable for switchingregulator, DC DC control. A