K2611 - аналоги, параметры транзистора - Справочник транзисторов

K2611 даташит

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K2611 K2611 K2611 K2611 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 11A,900V, R (Max1.10 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power fi

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y 7.0 S (typ.) fs = Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

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K2611SB K2611SB K2611SB K2611SB Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode p

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K2611S K2611S K2611S K2611S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mode power