KDW2521C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KDW2521C
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 277 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
Paquete / Cubierta: TSSOP-8
- Selección de transistores por parámetros
KDW2521C Datasheet (PDF)
kdw2521c.pdf

SMD Type ICSMD Type ICComplementary PowerTrench MOSFETKDW2521CFeaturesTSSOP-8Unit: mmN-Channel5.5A, 20V RDS(ON) =21m @VGS =4.5 VRDS(ON) = 35m @VGS =2.5VP-Channel-3.8 A, 20 V RDS(ON) =43m @ VGS =- 4.5 VRDS(ON) =70m @VGS =-2.5VHigh performance trench technology for extremely low RDS(ON)Absolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain
kdw2504p.pdf

SMD Type ICSMD Type ICDual P-Channel 2.5V Specified PowerTrench MOSFETKDW2504PTSSOP-8FeaturesUnit: mm-3.8 A, - 20 V. RDS(ON) = 0.043 @VGS =-4.5VRDS(ON) = 0.070 @VGS =-2.5VLow gate chargeHigh performance trench technology for extremely low RDS(ON)Extended VGSS range ( 12V) for battery applicationsAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Sou
kdw2503n.pdf

SMD Type ICSMD Type ICDual N-Channel 2.5V Specified PowerTrench MOSFETKDW2503NTSSOP-8FeaturesUnit: mm5.5 A, 20 V. RDS(ON) = 0.021 @VGS =4.5 VRDS(ON) = 0.035 @VGS =2.5VFast switching speedHigh performance trench technology for extremely low RDS(ON)Extended VGSS range ( 12V) for battery applicationsAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to So
kdw258p.pdf

SMD Type ICSMD Type ICP-Channel 1.8V Specified PowerTrench MOSFETKDW258PTSSOP-8FeaturesUnit: mm-9 A, -12 V. RDS(ON) = 11m @VGS =-4.5VRDS(ON) = 14m @VGS =-2.5VRDS(ON) = 20m @VGS =-1.8VRds ratings for use with 1.8 V logicHigh performance trench technology for extremely low RDS(ON)1,5,8: DrainLow gate charge2,3,6,7: SourceLow profile TSSOP-8 package4: GateAbsolute
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK4073LS | WPM4801 | S68N08ZRN | IRH9150 | UT20N03 | HFS2N60S | FDMS3660AS
History: 2SK4073LS | WPM4801 | S68N08ZRN | IRH9150 | UT20N03 | HFS2N60S | FDMS3660AS



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