KDW2521C Todos los transistores

 

KDW2521C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KDW2521C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 277 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: TSSOP-8
     - Selección de transistores por parámetros

 

KDW2521C Datasheet (PDF)

 ..1. Size:70K  kexin
kdw2521c.pdf pdf_icon

KDW2521C

SMD Type ICSMD Type ICComplementary PowerTrench MOSFETKDW2521CFeaturesTSSOP-8Unit: mmN-Channel5.5A, 20V RDS(ON) =21m @VGS =4.5 VRDS(ON) = 35m @VGS =2.5VP-Channel-3.8 A, 20 V RDS(ON) =43m @ VGS =- 4.5 VRDS(ON) =70m @VGS =-2.5VHigh performance trench technology for extremely low RDS(ON)Absolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P- Channel UnitDrain

 9.1. Size:62K  kexin
kdw2504p.pdf pdf_icon

KDW2521C

SMD Type ICSMD Type ICDual P-Channel 2.5V Specified PowerTrench MOSFETKDW2504PTSSOP-8FeaturesUnit: mm-3.8 A, - 20 V. RDS(ON) = 0.043 @VGS =-4.5VRDS(ON) = 0.070 @VGS =-2.5VLow gate chargeHigh performance trench technology for extremely low RDS(ON)Extended VGSS range ( 12V) for battery applicationsAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to Sou

 9.2. Size:63K  kexin
kdw2503n.pdf pdf_icon

KDW2521C

SMD Type ICSMD Type ICDual N-Channel 2.5V Specified PowerTrench MOSFETKDW2503NTSSOP-8FeaturesUnit: mm5.5 A, 20 V. RDS(ON) = 0.021 @VGS =4.5 VRDS(ON) = 0.035 @VGS =2.5VFast switching speedHigh performance trench technology for extremely low RDS(ON)Extended VGSS range ( 12V) for battery applicationsAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to So

 9.3. Size:62K  kexin
kdw258p.pdf pdf_icon

KDW2521C

SMD Type ICSMD Type ICP-Channel 1.8V Specified PowerTrench MOSFETKDW258PTSSOP-8FeaturesUnit: mm-9 A, -12 V. RDS(ON) = 11m @VGS =-4.5VRDS(ON) = 14m @VGS =-2.5VRDS(ON) = 20m @VGS =-1.8VRds ratings for use with 1.8 V logicHigh performance trench technology for extremely low RDS(ON)1,5,8: DrainLow gate charge2,3,6,7: SourceLow profile TSSOP-8 package4: GateAbsolute

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