KDW2521C Todos los transistores

 ..1. Size:70K  kexin
 kdw2521c.pdf

SMD Type IC SMD Type IC Complementary PowerTrench MOSFET KDW2521C Features TSSOP-8 Unit mm N-Channel 5.5A, 20V RDS(ON) =21m @VGS =4.5 V RDS(ON) = 35m @VGS =2.5V P-Channel -3.8 A, 20 V RDS(ON) =43m @ VGS =- 4.5 V RDS(ON) =70m @VGS =-2.5V High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain

 9.1. Size:62K  kexin
 kdw2504p.pdf

SMD Type IC SMD Type IC Dual P-Channel 2.5V Specified PowerTrench MOSFET KDW2504P TSSOP-8 Features Unit mm -3.8 A, - 20 V. RDS(ON) = 0.043 @VGS =-4.5V RDS(ON) = 0.070 @VGS =-2.5V Low gate charge High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Sou

 9.2. Size:63K  kexin
 kdw2503n.pdf

SMD Type IC SMD Type IC Dual N-Channel 2.5V Specified PowerTrench MOSFET KDW2503N TSSOP-8 Features Unit mm 5.5 A, 20 V. RDS(ON) = 0.021 @VGS =4.5 V RDS(ON) = 0.035 @VGS =2.5V Fast switching speed High performance trench technology for extremely low RDS(ON) Extended VGSS range ( 12V) for battery applications Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to So

 9.3. Size:62K  kexin
 kdw258p.pdf

SMD Type IC SMD Type IC P-Channel 1.8V Specified PowerTrench MOSFET KDW258P TSSOP-8 Features Unit mm -9 A, -12 V. RDS(ON) = 11m @VGS =-4.5V RDS(ON) = 14m @VGS =-2.5V RDS(ON) = 20m @VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON) 1,5,8 Drain Low gate charge 2,3,6,7 Source Low profile TSSOP-8 package 4 Gate Absolute