KF5N65I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N65I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 69.4 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 14.5 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 72 pF
Resistencia entre drenaje y fuente RDS(on): 1.75 Ohm
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de MOSFET KF5N65I
KF5N65I Datasheet (PDF)
kf5n65i.pdf
KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el
kf5n65p-f.pdf
KF5N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, fast reverse recovery time, low on resistance, low gateFDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forE _G A 9.9 + 0.2electronic ballast
kf5n65d-i.pdf
KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el
kf5n60p kf5n60f.pdf
KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
kf5n60p-f.pdf
KF5N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_switching mode power supplies. A 9.9
kf5n60fz.pdf
KF5N60P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60P, KF5N60PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow
kf5n60d i.pdf
KF5N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20ele
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
