KF5N65I datasheet, аналоги, основные параметры
Наименование производителя: KF5N65I 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 69.4 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 72 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.75 Ohm
Тип корпуса: IPAK
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Аналог (замена) для KF5N65I
- подборⓘ MOSFET транзистора по параметрам
KF5N65I даташит
kf5n65i.pdf
KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el
kf5n65p-f.pdf
KF5N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for E _ G A 9.9 + 0.2 electronic ballast
kf5n65d-i.pdf
KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el
kf5n60p kf5n60f.pdf
KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9
Другие IGBT... KF4N60F, KF4N65FM, KF5N25D, KF5N25F, KF5N40D, KF5N50FR, KF5N50PR, KF5N50PS, STP75NF75, KF6N70F, KF6N70I, KF7N65FM, KF9N40D, KHC21025, KHC2300, KHP45N03LT, KI1302DL
Параметры MOSFET. Взаимосвязь и компромиссы
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