PHB125N06LT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB125N06LT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: SOT404

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PHB125N06LT datasheet

 4.1. Size:56K  philips
 phb125n06l.pdf pdf_icon

PHB125N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC)1 75 A the device fe

 5.1. Size:55K  philips
 phb125n06t 1.pdf pdf_icon

PHB125N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC)1 75 A trench technology the dev

 9.1. Size:96K  philips
 php129nq04lt phb129nq04lt.pdf pdf_icon

PHB125N06LT

PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

 9.2. Size:114K  philips
 phb12nq15t phd12nq15t php12nq15t 1.pdf pdf_icon

PHB125N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 A g RDS(ON) 200 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in

MOSTRAR MÁS

Otros transistores... OM11N60SA, OM1N100SA, OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, 10N60, PHB130N03LT, PHB21N06LT, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E