Справочник MOSFET. PHB125N06LT

 

PHB125N06LT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PHB125N06LT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для PHB125N06LT

 

 

PHB125N06LT Datasheet (PDF)

 4.1. Size:56K  philips
 phb125n06l.pdf

PHB125N06LT PHB125N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting Using trench technology ID Drain current (DC)1 75 Athe device fe

 5.1. Size:55K  philips
 phb125n06t 1.pdf

PHB125N06LT PHB125N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB125N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC)1 75 Atrench technology the dev

 9.1. Size:96K  philips
 php129nq04lt phb129nq04lt.pdf

PHB125N06LT PHB125N06LT

PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

 9.2. Size:114K  philips
 phb12nq15t phd12nq15t php12nq15t 1.pdf

PHB125N06LT PHB125N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in

 9.3. Size:94K  philips
 phb129nq04lt php129nq04lt.pdf

PHB125N06LT PHB125N06LT

PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

Другие MOSFET... OM11N60SA , OM1N100SA , OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , IRFB4115 , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E .

 

 
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