PHB21N06LT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB21N06LT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT404

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PHB21N06LT datasheet

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PHB21N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) 75 m (VGS = 5 V) g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION

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PHB21N06LT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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PHB21N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 21 A trench technology the devic

Otros transistores... OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, IRFB4227, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT