PHB21N06LT Datasheet. Specs and Replacement

Type Designator: PHB21N06LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT404

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PHB21N06LT datasheet

 ..1. Size:114K  philips
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PHB21N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) 75 m (VGS = 5 V) g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION ... See More ⇒

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PHB21N06LT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:56K  philips
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PHB21N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 21 A trench technology the devic... See More ⇒

Detailed specifications: OM1N100ST, OM3N100SA, OM3N100ST, OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, IRFB4227, PHB24N03LT, PHB2N50E, PHB2N60E, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT

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