PHB21N06LT Datasheet and Replacement
Type Designator: PHB21N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT404
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PHB21N06LT Datasheet (PDF)
phb21n06lt phd21n06lt php21n06lt.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatibleRDS(ON) 75 m (VGS = 5 V)gRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION
php21n06lt phb21n06lt phd21n06lt.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
phb21n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHB21N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 21 Atrench technology the devic
Datasheet: OM1N100ST , OM3N100SA , OM3N100ST , OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , 7N65 , PHB24N03LT , PHB2N50E , PHB2N60E , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT .
History: STP6NA80FI | TSM4424CS | LKK47-06C5 | SFG10S08DF | APT1004RGN | BRCS200P03DP | IRFB3004GPBF
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History: STP6NA80FI | TSM4424CS | LKK47-06C5 | SFG10S08DF | APT1004RGN | BRCS200P03DP | IRFB3004GPBF



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