KI5908DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KI5908DC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 36 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: CHIPFET

Búsqueda de reemplazo de MOSFET KI5908DC

KI5908DC Datasheet (PDF)

..1. Size:66K renesas
ki5908dc.pdf

SMD Type ICSMD Type ICDual N-Channel 20-V (D-S) MOSFETKI5908DCFeaturesTrenchFET Power MOSFETSUltra Low rDS(on) and Excellent PowerHandling In Compact FootprintAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 8Continuous Drain Current (TJ = 150 ) TA =25 5.9 4.4IDTA =85 4.2 3.1APulsed Drai

9.1. Size:67K renesas
ki5905dc.pdf

SMD Type ICSMD Type ICDual P-Channel 1.8-V (G-S) MOSFETKI5905DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -8VGate-Source Voltage VGS 8TA =25 4.1 3.0Continuous Drain Current (TJ = 150 ) * IDTA =85 2.9 2.2APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power D

9.2. Size:67K renesas
ki5903dc.pdf

SMD Type ICSMD Type ICDual P-Channel 2.5-V (G-S) MOSFETKI5903DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -20VGate-Source Voltage VGS 12TA =25 2.9 2.1Continuous Drain Current (TJ = 150 ) * IDTA =85 2.1 1.5APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power

9.3. Size:65K renesas
ki5902dc.pdf

SMD Type ICSMD Type ICDual N-Channel 30-V (D-S) MOSFETKI5902DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 ) TA =25 3.9 2.9IDTA =85 2.8 2.1APulsed Drain Current IDM 10Continuous Source Current (Diode Conduction)* IS 4.8 0.9Maximum Power Diss

9.4. Size:66K renesas
ki5904dc.pdf

SMD Type ICSMD Type ICDual N-Channel 2.5-V (G-S) MOSFETKI5904DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 12Continuous Drain Current (TJ = 150 ) TA =25 4.2 3.1IDTA =85 3.0 2.2APulsed Drain Current IDM 10Continuous Source Current (Diode Conduction)* IS 1.8 0.9Maximum Power Dis

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