KI5908DC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: KI5908DC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 36 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: CHIPFET
- подбор MOSFET транзистора по параметрам
KI5908DC Datasheet (PDF)
ki5908dc.pdf

SMD Type ICSMD Type ICDual N-Channel 20-V (D-S) MOSFETKI5908DCFeaturesTrenchFET Power MOSFETSUltra Low rDS(on) and Excellent PowerHandling In Compact FootprintAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 8Continuous Drain Current (TJ = 150 ) TA =25 5.9 4.4IDTA =85 4.2 3.1APulsed Drai
ki5905dc.pdf

SMD Type ICSMD Type ICDual P-Channel 1.8-V (G-S) MOSFETKI5905DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -8VGate-Source Voltage VGS 8TA =25 4.1 3.0Continuous Drain Current (TJ = 150 ) * IDTA =85 2.9 2.2APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power D
ki5903dc.pdf

SMD Type ICSMD Type ICDual P-Channel 2.5-V (G-S) MOSFETKI5903DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -20VGate-Source Voltage VGS 12TA =25 2.9 2.1Continuous Drain Current (TJ = 150 ) * IDTA =85 2.1 1.5APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power
ki5902dc.pdf

SMD Type ICSMD Type ICDual N-Channel 30-V (D-S) MOSFETKI5902DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 ) TA =25 3.9 2.9IDTA =85 2.8 2.1APulsed Drain Current IDM 10Continuous Source Current (Diode Conduction)* IS 4.8 0.9Maximum Power Diss
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP0155AG | SI7913DN | SCT3060AL | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F
History: NCEP0155AG | SI7913DN | SCT3060AL | MC11N005 | NVMFS5C628N | JCS5N50CT | NCEP026N10F



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent