KML0D4N20E Todos los transistores

 

KML0D4N20E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KML0D4N20E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.21 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 6 V

Corriente continua de drenaje (Id): 0.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Carga de compuerta (Qg): 555 nC

Tiempo de elevación (tr): 3 nS

Conductancia de drenaje-sustrato (Cd): 15 pF

Resistencia drenaje-fuente RDS(on): 0.7 Ohm

Empaquetado / Estuche: SOT-416

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KML0D4N20E Datasheet (PDF)

1.1. kml0d4n20e.pdf Size:771K _update_mosfet

KML0D4N20E
KML0D4N20E

SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES ·VDSS=20V, ID=0.4A ·Drain-Soure ON Resistance : RDS(ON)=0.70Ω @ VGS=4.5V : RDS(ON)=0.85Ω @ VGS=2.5V : RDS(ON)=1.25Ω @ VGS=1.8V ·Super High Dense Cell Design MAXIMUM RATING (Ta=25℃) CHAR

1.2. kml0d4n20v.pdf Size:377K _kec

KML0D4N20E
KML0D4N20E

SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It’s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ G 0.8 +

 1.3. kml0d4n20tv.pdf Size:743K _kec

KML0D4N20E
KML0D4N20E

SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 ·VDSS=20V, ID=0.4A C 0.34 Max ·Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 : RDS(ON)=0.70Ω @ VGS=4.5V _ F 0.8 + 0.05

Otros transistores... NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: NVJD4152P | NVGS5120P | NVGS4141N | NVGS4111P | NVGS3443 | NVGS3441 | NVGS3136P | NVGS3130N | NVF6P02 | NVF5P03 | NVF3055L108 | NVF3055-100 | NVF2955 | NVF2201N | NVE4153N |

 

 

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