KML0D4N20E - аналоги, параметры транзистора - Справочник транзисторов

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SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR

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SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ G 0.8 +

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SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 VDSS=20V, ID=0.4A C 0.34 Max Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ F 0.8 + 0.05

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SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA

Другие MOSFET... KI5905DC , KI5908DC , KI5935DC , KI5P03DY , KI6968BEDQ , KI7540DP , KMB075N75P , KMDF2C03HD , AON7408 , KML0D4P20E , KN0606L , KO3402 , KO3403 , KO3404 , KO3407 , KO3409 , KO3413 .