PHB2N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB2N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm

Encapsulados: SOT404

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PHB2N60E datasheet

 ..1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf pdf_icon

PHB2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan

 9.1. Size:59K  philips
 phb2n50 1.pdf pdf_icon

PHB2N60E

Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dis

 9.2. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf pdf_icon

PHB2N60E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe

Otros transistores... OM5N100SA, OM6N100SA, PHB11N50E, PHB125N06LT, PHB130N03LT, PHB21N06LT, PHB24N03LT, PHB2N50E, 7N65, PHB37N06LT, PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E