All MOSFET. PHB2N60E Datasheet

 

PHB2N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHB2N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT404

 PHB2N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHB2N60E Datasheet (PDF)

Datasheet: OM5N100SA , OM6N100SA , PHB11N50E , PHB125N06LT , PHB130N03LT , PHB21N06LT , PHB24N03LT , PHB2N50E , 2SK3878 , PHB37N06LT , PHB3N40E , PHB3N50E , PHB3N60E , PHB42N03LT , PHB44N06LT , PHB45N03LT , PHB4N60E .

 

 
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