KP978GC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KP978GC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 146 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 50 pF

Encapsulados: KT-81

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KP978GC datasheet

 ..1. Size:95K  syntez microelectronics
 kp978gc.pdf pdf_icon

KP978GC

Syntez Microelectronics SILICON MOS N-CHANNEL RF POWER TRANSISTOR KP978GC 40 W, up to 500 MHz, Enhancement Mode ________________________________________________ Designed primarily for wideband large signal output and driver from 30 500 MHz. Features Performance at 500 MHz, 28 Vdc Power Gain 12 dB Min Output Power 40 W Efficiency 50 % Min Absolute Maximum Ratings

 9.1. Size:95K  syntez microelectronics
 kp978vc.pdf pdf_icon

KP978GC

Syntez Microelectronics SILICON MOS N-CHANNEL RF POWER TRANSISTOR KP978VC 20 W, up to 500 MHz, Enhancement Mode ________________________________________________ Designed primarily for wideband large signal output and driver from 30 500 MHz. Features Performance at 500 MHz, 28 Vdc Power Gain 12 dB Min Output Power 20 W Efficiency 50 % Min Absolute Maximum Ratings

 9.2. Size:99K  syntez microelectronics
 kp978a.pdf pdf_icon

KP978GC

Syntez Microelectronics SILICON MOS N-CHANNEL RF POWER TRANSISTOR KP978A 5 W, up to 500 MHz, Enhancement Mode ________________________________________________ Designed primarily for wideband large signal output and driver from 30 500 MHz. Features Performance at 500 MHz, 28 Vdc Power Gain 13 dB Min Output Power 5 W Efficiency 50 % Min Absolute Maximum Ratings Pa

 9.3. Size:95K  syntez microelectronics
 kp978bc.pdf pdf_icon

KP978GC

Syntez Microelectronics SILICON MOS N-CHANNEL RF POWER TRANSISTOR KP978BC 10 W, up to 500 MHz, Enhancement Mode ________________________________________________ Designed primarily for wideband large signal output and driver from 30 500 MHz. Features Performance at 500 MHz, 28 Vdc Power Gain 13 dB Min Output Power 10 W Efficiency 50 % Min Absolute Maximum Ratings

MOSTRAR MÁS

Otros transistores... KP8M8, KP8M9, KP8N60D, KP8N60F, KP8N65D, KP977AC, KP978A, KP978BC, IRF2807, KP978VC, KP979A, KP979B, KP979VC, KP980A, KP981A, KP981BC, KP981VC