KPA1790 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KPA1790
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
Qgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 1.4 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: SOP-8
KPA1790 Datasheet (PDF)
kpa1790.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ
kpa1793.pdf

SMD Type ICSMD Type ICMOS Field Effect TransistorKPA1793FeaturesLow on-state resistanceN-channel RDS(on)1 =69 m MAX. (VGS =10 V, ID =1.5 A)RDS(on)2 =72 m MAX. (VGS =4.0 V, ID =1.5 A)RDS(on)3 = 107 m MAX. (VGS =2.5 V, ID =1.0 A)P-channel RDS(on)1 = 115 m MAX. (VGS =-4.5 V, ID =-1.5A)RDS(on)2 = 120 m MAX. (VGS =-4.0V, ID =-1.5 A)RDS(on)3 = 190 m MAX. (VGS =-2.5V, ID =-1.0 A)
kpa1792.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ
kpa1716.pdf

SMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1716FeaturesLow on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS =-10 V, ID =-4 A)RDS(on)2 =17 m TYP. (VGS =-4.5 V, ID =-4A)RDS(on)3 =19 m TYP. (VGS = -4.01 V, ID =-4 A)Low Ciss : Ciss = 2100 pF TYP.Built-in G-S protection diodeSmall and surface mount package
Otros transistores... KP980A , KP981A , KP981BC , KP981VC , KPA1716 , KPA1750 , KPA1758 , KPA1764 , AO3401 , KPA1792 , KPA1793 , KPA1816 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 .
History: APT6070AN
History: APT6070AN



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