KPA1790 - Даташиты. Аналоги. Основные параметры

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ

SMD Type ICSMD Type ICMOS Field Effect TransistorKPA1793FeaturesLow on-state resistanceN-channel RDS(on)1 =69 m MAX. (VGS =10 V, ID =1.5 A)RDS(on)2 =72 m MAX. (VGS =4.0 V, ID =1.5 A)RDS(on)3 = 107 m MAX. (VGS =2.5 V, ID =1.0 A)P-channel RDS(on)1 = 115 m MAX. (VGS =-4.5 V, ID =-1.5A)RDS(on)2 = 120 m MAX. (VGS =-4.0V, ID =-1.5 A)RDS(on)3 = 190 m MAX. (VGS =-2.5V, ID =-1.0 A)

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ

SMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1716FeaturesLow on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS =-10 V, ID =-4 A)RDS(on)2 =17 m TYP. (VGS =-4.5 V, ID =-4A)RDS(on)3 =19 m TYP. (VGS = -4.01 V, ID =-4 A)Low Ciss : Ciss = 2100 pF TYP.Built-in G-S protection diodeSmall and surface mount package

SMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1764FeaturesDual chip typeLow on-state resistanceRDS(on)1 =27 m TYP. (VGS =10V, ID =3.5 A)RDS(on)2 =32 m TYP. (VGS =4.5 V, ID =3.5 A)1 : Source 1RDS(on)3 =34 m TYP. (VGS =4.0 V, ID =3.5 A)2: Gate 1Low input capacitance7, 8 : Drain 13 : Source 2Ciss = 1300 pF TYP.4: Gate 25, 6 : Drain 2Bui

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD TypeSMD Type ICProduct specificationKPA1758FeaturesDual MOS FET chips in small package2.5 V gate drive type low on-state resistanceRDS(on)1 =30 m (MAX.) (VGS =4.5 V, ID =3.0 A)RDS(on)2 =40 m (MAX.) (VGS =2.5 V, ID =3.0 A)1 : Sou

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1750FeaturesDual MOSFET chips in small package4V Gate Drive Type and Low On-ResistanceRDS(on)1 =0.09 TYP. (VGS =-10 V, ID =-1.8 A)RDS(on)2 =0.18 TYP. (VGS =-4V, ID = -1.8A)Low Ciss : Ciss = 540 pF TYP.