PHB6N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB6N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 5.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT404

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PHB6N50E datasheet

 ..1. Size:77K  philips
 php6n50e phb6n50e.pdf pdf_icon

PHB6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 A g Low thermal resistance RDS(ON) 1.5 s GENERAL DESCRIPTION N-channel, enh

 9.1. Size:58K  philips
 php6nd50e phb6nd50e.pdf pdf_icon

PHB6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performance g Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.2. Size:74K  philips
 php6n60e phb6n60e.pdf pdf_icon

PHB6N50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 A g Low thermal resistance RDS(ON) 1.8 s GENERAL DESCRIPTION N-channel, enh

Otros transistores... PHB45N03LT, PHB4N60E, PHB50N03LT, PHB50N06LT, PHB55N03LT, PHB60N06LT, PHB65N06LT, PHB69N03LT, SPP20N60C3, PHB6N60E, PHB6ND50E, PHB7N60E, PHB80N06LT, PHB87N03LT, PHB8N50E, PHB8ND50E, PHB9N60E