PHB6N50E Datasheet and Replacement
Type Designator: PHB6N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id|ⓘ - Maximum Drain Current: 5.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT404
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PHB6N50E Datasheet (PDF)
php6n50e phb6n50e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh
php6nd50e phb6nd50e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di
php6n60e phb6n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh
Datasheet: PHB45N03LT , PHB4N60E , PHB50N03LT , PHB50N06LT , PHB55N03LT , PHB60N06LT , PHB65N06LT , PHB69N03LT , IRFP450 , PHB6N60E , PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT , PHB8N50E , PHB8ND50E , PHB9N60E .
History: NTB6410ANG | SM2F04NSU | BRCS200P03DP | STB75N20 | SML10026DFN | LKK47-06C5 | TSM4424CS
Keywords - PHB6N50E MOSFET datasheet
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History: NTB6410ANG | SM2F04NSU | BRCS200P03DP | STB75N20 | SML10026DFN | LKK47-06C5 | TSM4424CS



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