L1N60A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L1N60A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.9 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm

Encapsulados: TO-92

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L1N60A datasheet

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 l1n60a l1n60f l1n60i.pdf pdf_icon

L1N60A

LESHAN RADIO COMPANY, LTD. L1N60 1.0 Amps, 600 Volts N-CHANNEL MOSFET 1 2 3 TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1 charge, low on-state resistance and have a high rugged avalanche 2 3 TO-220F-3L characteristics. This power MOSFET is usually used at high speed sw

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 l1n60.pdf pdf_icon

L1N60A

LESHAN RADIO COMPANY, LTD. Power MOSFET L1N60 1.2 Amps, 600 Volts N Channel The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1 TO- 251 characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

Otros transistores... KVN4525Z, KVP4424Z, KW306, KX020N06, KX7N10L, KXP20N15, KXU03N25, KXU05N25, IRF540N, L1N60F, L1N60I, L2N60D, L2N60F, L2N60I, L2N60P, L2N7002DMT1G, L2N7002DW1T1G