L1N60A Todos los transistores

 

L1N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L1N60A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.9 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm
   Paquete / Cubierta: TO-92
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L1N60A Datasheet (PDF)

 ..1. Size:212K  lrc
 l1n60a l1n60f l1n60i.pdf pdf_icon

L1N60A

LESHAN RADIO COMPANY, LTD.L1N601.0 Amps, 600 Volts N-CHANNEL MOSFET 123TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche 23 TO-220F-3Lcharacteristics. This power MOSFET is usually used at high speed sw

 9.1. Size:415K  lrc
 l1n60.pdf pdf_icon

L1N60A

LESHAN RADIO COMPANY, LTD.Power MOSFETL1N601.2 Amps, 600 Volts NChannelThe LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO- 251characteristics. This power MOSFET is usually used at high speed switching applications in power suppli

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2202 | SL4813A | SIHF10N40D

 

 
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