NVD3055-150 Datasheet. Equivalente

 ..1. Size:123K  onsemi
 ntd3055-150 nvd3055-150.pdf

NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge www.onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements

 ..2. Size:103K  onsemi
 nvd3055-150.pdf

NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requireme

 6.1. Size:112K  onsemi
 nvd3055-094.pdf

NTD3055-094, NVD3055-094 Power MOSFET 12 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http //onsemi.com Lower RDS(on) Lower VDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower and Tighter VSD 60 V 94 mW 12 A Lower Diode Reverse Recovery Time Low

 6.2. Size:146K  onsemi
 ntd3055-094 nvd3055-094.pdf

NTD3055-094, NVD3055-094 MOSFET Power, N-Channel, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D

 7.1. Size:238K  onsemi
 ntd3055l170 nvd3055l170.pdf

NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge RDS(on) = 170 mW circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

 7.2. Size:115K  onsemi
 nvd3055l170.pdf

NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 9.0 AMPERES, 60 VOLTS RDS(on) = 170 mW Features NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change R

 7.3. Size:261K  inchange semiconductor
 nvd3055l170.pdf

isc N-Channel MOSFET Transistor NVD3055L170 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE