NVD3055-150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD3055-150
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37.1 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de NVD3055-150 MOSFET
NVD3055-150 Datasheet (PDF)
ntd3055-150 nvd3055-150.pdf

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements
nvd3055-150.pdf

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requireme
nvd3055-094.pdf

NTD3055-094, NVD3055-094Power MOSFET12 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower and Tighter VSD60 V 94 mW 12 A Lower Diode Reverse Recovery Time Low
ntd3055-094 nvd3055-094.pdf

NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D
Otros transistores... NVB60N06 , NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , IRFB31N20D , NVD3055L170 , NVD4804N , NVD4805N , NVD4806N , NVD4808N , NVD4809N , NVD4810N , NVD4813NH .
History: LND150K1 | MSK7804 | CS4N65A3HD | HY150N075T | DAMH160N200 | PSMN5R5-60YS | BUK9M5R0-40H
History: LND150K1 | MSK7804 | CS4N65A3HD | HY150N075T | DAMH160N200 | PSMN5R5-60YS | BUK9M5R0-40H



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