NVD4810N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD4810N
Código: 4810N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 54 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 9.2 nC
Tiempo de subida (tr): 20.7 nS
Conductancia de drenaje-sustrato (Cd): 284 pF
Resistencia entre drenaje y fuente RDS(on): 0.01 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NVD4810N
NVD4810N Datasheet (PDF)
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nvd4809n.pdf
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ntd4809n nvd4809n.pdf
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nvd4804n.pdf
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nvd4805n.pdf
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nvd4808n.pdf
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nvd4856n.pdf
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ntd4804n nvd4804n.pdf
NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A
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