NVD4810N Datasheet. Specs and Replacement

Type Designator: NVD4810N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.7 nS

Cossⓘ - Output Capacitance: 284 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DPAK

NVD4810N substitution

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NVD4810N datasheet

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NVD4810N

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @ ... See More ⇒

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NVD4810N

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NVD4810N

NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 13 mW @ 10 V Unique Site and Contro... See More ⇒

 9.1. Size:114K  onsemi
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NVD4810N

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @... See More ⇒

Detailed specifications: NVD3055-094, NVD3055-150, NVD3055L170, NVD4804N, NVD4805N, NVD4806N, NVD4808N, NVD4809N, AO3400A, NVD4813NH, NVD4856N, NVD4C05N, NVD5117PL, NVD5414N, NVD5484NL, NVD5490NL, NVD5802N

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