NVD4856N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD4856N
Código: 4856N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 89 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 22.5 nS
Cossⓘ - Capacitancia de salida: 567 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NVD4856N
NVD4856N Datasheet (PDF)
nvd4856n.pdf
NTD4856N, NVD4856NPower MOSFET25 V, 89 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring4.7 mW @ 10 V25 V89 AU
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NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @
nvd4806n.pdf
NTD4806N, NVD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.0 mW @
nvd4809n.pdf
NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A
ntd4805n nvd4805n.pdf
NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q
ntd4809n nvd4809n.pdf
NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A
nvd4813nh.pdf
NTD4813NH, NVD4813NHPower MOSFET30 V, 40 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring13 mW @ 10 VUnique Site and Contro
nvd4804n.pdf
NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117
nvd4805n.pdf
NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q
nvd4808n.pdf
NTD4808N, NVD4808NPower MOSFET30 V, 63 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q
ntd4804n nvd4804n.pdf
NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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