NVD4856N datasheet, подбор замены

 ..1. Size:115K  onsemi
 nvd4856n.pdf 

NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 4.7 mW @ 10 V 25 V 89 A U

 9.1. Size:148K  onsemi
 ntd4810n-1g nvd4810n.pdf 

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @

 9.2. Size:114K  onsemi
 nvd4806n.pdf 

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @

 9.3. Size:113K  onsemi
 nvd4809n.pdf 

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A

 9.4. Size:116K  onsemi
 ntd4805n nvd4805n.pdf 

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 9.5. Size:897K  onsemi
 ntd4813nh nvd4813nh.pdf 

 9.6. Size:117K  onsemi
 ntd4809n nvd4809n.pdf 

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A

 9.7. Size:108K  onsemi
 nvd4813nh.pdf 

NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring 13 mW @ 10 V Unique Site and Contro

 9.8. Size:82K  onsemi
 nvd4804n.pdf 

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117

 9.9. Size:113K  onsemi
 nvd4805n.pdf 

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 9.10. Size:112K  onsemi
 nvd4808n.pdf 

NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 9.11. Size:89K  onsemi
 ntd4804n nvd4804n.pdf 

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A