NVD5484NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5484NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 54 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de NVD5484NL MOSFET
NVD5484NL Datasheet (PDF)
nvd5484nl.pdf
NVD5484NLPower MOSFET60 V, 17 mW, 54 A, Single N-ChannelLogic Level, DPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com High Current Capability Avalanche Energy SpecifiedV(BR)DSS RDS(on) ID AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 17 mW @ 10 V60 V 54 ACompliant23 mW @ 4.5 V
nvd5414n.pdf
NTD5414N, NVD5414NPower MOSFET24 A, 60 V Single N-Channel DPAKFeatures Low RDS(on) High Current Capability http://onsemi.com Avalanche Energy SpecifiedID MAX NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable60 V 37 mW @ 10 V 24 A These Dev
nvd5490nl.pdf
NVD5490NLPower MOSFET60 V, 64 mW, 17 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS64 mW @ 10 VCompliant60 V 17 A85 mW @ 4.5 VMAXIMUM RATINGS (T
Otros transistores... NVD4808N , NVD4809N , NVD4810N , NVD4813NH , NVD4856N , NVD4C05N , NVD5117PL , NVD5414N , IRFZ46N , NVD5490NL , NVD5802N , NVD5805N , NVD5806N , NVD5807N , NVD5890NL , NVD5890NT4G , NVD6414AN .
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